24C02C DATASHEET PDF

The device is optimized for use in many. In addition, the entire family is available in. Table 1. Pin Configuration.

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Array 80h-FFh. The Microchip Technology Inc. The device is organized as a single. Low-current design permits operation with. The device has a page write capabil-. Functional address lines allow the connection of up to.

The device is. TSSOP packages. Block Diagram. A0 A1 A2. HV Generator. Sense Amp. Package Types. DSJ-page 1. All inputs and outputs w. Storage temperature Ambient temperature with power applied ESD protection on all pins This is a stress rating only and functional operation of the device at these or any other conditions above those. Exposure to Absolute Maximum Rating.

Electrical Characteristics:. D2 V IH. High-level input voltage 0. D3 V IL. Low-level input voltage. Trigger inputs. D5 V OL. Low-level output voltage. D6 I LI. Input leakage current. D7 I LO. Output leakage current. Pin capacitance. I CC Write. D10 I CCS. Standby current. DSJ-page 2. Download 24C02C Datasheet. The device is organized as a single block of x 8-bit memory with a 2-wire serial interface. Low-current design permits operation with max.

The device has a page write capabil- ity for up to 16 bytes of data and has fast write cycle times of only 1 ms for both byte and page writes. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Characteristic Min.

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24C02 EEPROM. Datasheet pdf. Equivalent

Array 80h-FFh. The Microchip Technology Inc. The device is organized as a single. Low-current design permits operation with. The device has a page write capabil-. Functional address lines allow the connection of up to. The device is.

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24C02C EEPROM. Datasheet pdf. Equivalent

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