General Description. Product Summary. The AO uses advanced trench technology to provide. This device is suitable for use as. ESD protected.
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General Description. Product Summary. The AO uses advanced trench technology to provide. This device is suitable for use as. ESD protected. Top View. Bottom View. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain. Pulsed Drain Current C. Junction and Storage Temperature Range.
Thermal Characteristics. Maximum Junction-to-Ambient A. Maximum Junction-to-Ambient A D. Maximum Junction-to-Lead. Rev 7: Sep Page 1 of 5. No Preview Available! Min Typ Max Units. I GSS. V GS th. Gate-Body leakage current. Gate Threshold Voltage. On state drain current. R DS ON. Forward Transconductance.
Diode Forward Voltage. Maximum Body-Diode Continuous Current. C iss Input Capacitance. C oss Output Capacitance. C rss Reverse Transfer Capacitance.
R g Gate resistance. Q g Total Gate Charge. Q gs Gate Source Charge. Q gd Gate Drain Charge. Turn-On DelayTime. Turn-Off DelayTime. Ratings are based on low frequency and duty cycles to keep. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in 2 FR-4 board with.
AO3415 AF SOT23 P-CH MOSFET
AO3415 MOSFET. Datasheet pdf. Equivalent